Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

Flexible ferroelectric element based on van der Waals heteroepitaxy

We present a promising technology for nonvolatile flexible electronic devices: A direct fabrication of epitaxial lead zirconium titanate (PZT) on flexible mica substrate via van der Waals epitaxy. These single-crystalline flexible ferroelectric PZT films not only retain their performance, reliability, and thermal stability comparable to those on rigid counterparts in tests of nonvolatile memory...

Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination

The electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination has been determined by angle-resolved photoelectron spectroscopy using photons in the energy range hν= 12–170 eV supplied by the BESSY and ALS synchrotron light sources. The Si(1 1 1):GaSe surface is isoelectronic to the passivated Si(1 1 1):H and Si(1 1 1):As surfaces, and also reflects the principal building...

Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconduct...

Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy.

Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures on a wafer scale with an atomically sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2...